Determine the type of RAM (package decode-dimms)

  • Install i2c-tools (debian/ubuntu aptitude install i2c-tools)
  • modprobe eeprom
  • execute decode-dimms

Example output of decode-dimms:

# decode-dimms version 5733 (2009-06-09 13:13:41 +0200)

Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others

Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/0-0054
Guessing DIMM is in                             bank 5

—=== SPD EEPROM Information ===—
EEPROM Checksum of bytes 0-62                   OK (0x6F)
# of bytes written to SDRAM EEPROM              128
Total number of bytes in EEPROM                 256
Fundamental Memory type                         SDR SDRAM
SPD Revision                                    18

—=== Memory Characteristics ===—
Size                                            256 MB
tCL-tRCD-tRP-tRAS                               3-2-2-6
Number of Row Address Bits                      12
Number of Col Address Bits                      10
Number of Module Rows                           2
Data Width                                      64
Voltage Interface Level                         LVTTL (not 5V tolerant)
Module Configuration Type                       No Parity
Refresh Type                                    Self Refreshing
Refresh Rate                                    Normal (15.625 us)
Primary SDRAM Component Bank Config             No Bank2 OR Bank2 = Bank1 width
Primary SDRAM Component Widths                  8
Error Checking SDRAM Component Bank Config      No Bank2 OR Bank2 = Bank1 width
Error Checking SDRAM Component Widths           Undefined!
Min Clock Delay for Back to Back Random Access  1
Supported Burst Lengths                         1, 2, 4, 8, Page
Number of Device Banks                          4
Supported CAS Latencies                         3T, 2T
Supported CS Latencies                          0
Supported WE Latencies                          0
Cycle Time                                      7.5 ns at CAS 3
7.5 ns ns at CAS 2
Access Time                                     5.4 ns at CAS 3
5.4 ns ns at CAS 2
SDRAM Module Attributes                         (None Reported)
SDRAM Device Attributes (General)               Supports Auto-Precharge
Supports Precharge All
Supports Write1/Read Burst
Lower VCC Tolerance: 10%
Upper VCC Tolerance: 10%
Minimum Row Precharge Time                      15 ns
Row Active to Row Active Min                    15 ns
RAS to CAS Delay                                15 ns
Min RAS Pulse Width                             45 ns
Row Densities                                   128 MByte
Command and Address Signal Setup Time           1.5 ns
Command and Address Signal Hold Time            0.8 ns
Data Signal Setup Time                          1.5 ns
Data Signal Hold Time                           0.8 ns

—=== Manufacturing Information ===—
Manufacturer                                    Hyundai Electronics
Manufacturing Location Code                     0x02
Part Number                                     71V32635HCT8P-K
Revision Code                                   0x4141
Manufacturing Date                              2009-W67
Assembly Serial Number                          0x80E1211B

—=== Intel Specification ===—
Frequency                                       100MHz or 133MHz
Details for 100MHz Support                      Intel Concurrent Auto-precharge
CAS Latency = 2
CAS Latency = 3
Junction Temp A (100 degrees C)
CLK 3 Connected
CLK 2 Connected
CLK 1 Connected
CLK 0 Connected
Double-sided DIMM

Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/0-0055
Guessing DIMM is in                             bank 6

—=== SPD EEPROM Information ===—
EEPROM Checksum of bytes 0-62                   OK (0x9F)
# of bytes written to SDRAM EEPROM              128
Total number of bytes in EEPROM                 256
Fundamental Memory type                         SDR SDRAM
SPD Revision                                    18

—=== Memory Characteristics ===—
Size                                            128 MB
tCL-tRCD-tRP-tRAS                               3-3-3-6
Number of Row Address Bits                      12
Number of Col Address Bits                      9
Number of Module Rows                           2
Data Width                                      64
Voltage Interface Level                         LVTTL (not 5V tolerant)
Module Configuration Type                       No Parity
Refresh Type                                    Self Refreshing
Refresh Rate                                    Normal (15.625 us)
Primary SDRAM Component Bank Config             No Bank2 OR Bank2 = Bank1 width
Primary SDRAM Component Widths                  8
Error Checking SDRAM Component Bank Config      No Bank2 OR Bank2 = Bank1 width
Error Checking SDRAM Component Widths           Undefined!
Min Clock Delay for Back to Back Random Access  1
Supported Burst Lengths                         1, 2, 4, 8, Page
Number of Device Banks                          4
Supported CAS Latencies                         3T, 2T
Supported CS Latencies                          0
Supported WE Latencies                          0
Cycle Time                                      7.5 ns at CAS 3
10 ns ns at CAS 2
Access Time                                     5.4 ns at CAS 3
6 ns ns at CAS 2
SDRAM Module Attributes                         (None Reported)
SDRAM Device Attributes (General)               Supports Auto-Precharge
Supports Precharge All
Supports Write1/Read Burst
Lower VCC Tolerance: 10%
Upper VCC Tolerance: 10%
Minimum Row Precharge Time                      20 ns
Row Active to Row Active Min                    15 ns
RAS to CAS Delay                                20 ns
Min RAS Pulse Width                             45 ns
Row Densities                                   64 MByte
Command and Address Signal Setup Time           1.5 ns
Command and Address Signal Hold Time            0.8 ns
Data Signal Setup Time                          1.5 ns
Data Signal Hold Time                           0.8 ns

—=== Manufacturing Information ===—
Manufacturer                                    Hyundai Electronics
Manufacturing Location Code                     0x01
Part Number                                     7V631601BTFG-75
Revision Code                                   0x4241
Manufacturing Date                              2052-W00
Assembly Serial Number                          0xA202C14B

—=== Intel Specification ===—
Frequency                                       100MHz or 133MHz
Details for 100MHz Support                      Intel Concurrent Auto-precharge
CAS Latency = 2
CAS Latency = 3
Junction Temp B (90 degrees C)
CLK 3 Connected
CLK 2 Connected
CLK 1 Connected
CLK 0 Connected
Double-sided DIMM

Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/0-0056
Guessing DIMM is in                             bank 7

—=== SPD EEPROM Information ===—
EEPROM Checksum of bytes 0-62                   OK (0xE1)
# of bytes written to SDRAM EEPROM              128
Total number of bytes in EEPROM                 256
Fundamental Memory type                         SDR SDRAM
SPD Revision                                    18

—=== Memory Characteristics ===—
Size                                            128 MB
tCL-tRCD-tRP-tRAS                               3-2-2-5
Number of Row Address Bits                      12
Number of Col Address Bits                      9
Number of Module Rows                           2
Data Width                                      64
Voltage Interface Level                         LVTTL (not 5V tolerant)
Module Configuration Type                       No Parity
Refresh Type                                    Self Refreshing
Refresh Rate                                    Normal (15.625 us)
Primary SDRAM Component Bank Config             No Bank2 OR Bank2 = Bank1 width
Primary SDRAM Component Widths                  8
Error Checking SDRAM Component Bank Config      No Bank2 OR Bank2 = Bank1 width
Error Checking SDRAM Component Widths           Undefined!
Min Clock Delay for Back to Back Random Access  1
Supported Burst Lengths                         1, 2, 4, 8, Page
Number of Device Banks                          4
Supported CAS Latencies                         3T, 2T
Supported CS Latencies                          0
Supported WE Latencies                          0
Cycle Time                                      10 ns at CAS 3
10 ns ns at CAS 2
Access Time                                     6 ns at CAS 3
6 ns ns at CAS 2
SDRAM Module Attributes                         (None Reported)
SDRAM Device Attributes (General)               Supports Auto-Precharge
Supports Precharge All
Supports Write1/Read Burst
Lower VCC Tolerance: 10%
Upper VCC Tolerance: 10%
Minimum Row Precharge Time                      20 ns
Row Active to Row Active Min                    16 ns
RAS to CAS Delay                                20 ns
Min RAS Pulse Width                             45 ns
Row Densities                                   64 MByte
Command and Address Signal Setup Time           2 ns
Command and Address Signal Hold Time            1 ns
Data Signal Setup Time                          2 ns
Data Signal Hold Time                           1 ns

—=== Manufacturing Information ===—
Manufacturer                                    Infineon (former Siemens)
Custom Manufacturer Data                        49 4E 46 49 4E 45 4F (“INFINEO”)
Manufacturing Location Code                     0x08
Part Number                                     HYS64V16220GU-8
Revision Code                                   0x0102
Manufacturing Date                              2000-W14
Assembly Serial Number                          0x0102BE2E

—=== Intel Specification ===—
Frequency                                       100MHz or 133MHz
Details for 100MHz Support                      Intel Concurrent Auto-precharge
CAS Latency = 2
CAS Latency = 3
Junction Temp A (100 degrees C)
CLK 3 Connected
CLK 2 Connected
CLK 1 Connected
CLK 0 Connected
Double-sided DIMM

Number of SDRAM DIMMs detected and decoded: 3

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